ON Semiconductor FDS8858CZ MOSFET 1 N-Kanal, P-Kanal 900 mW SOIC-8

FDS8858CZ

MOSFET

SOIC-8

ON Semiconductor

OnS

N-Kanal

P-Kanal

8.6 A

7.3 A

30 V

900 mW

17 mΩ

8.6 A

10 V

3 V

250 µA

24 nC

10 V

1205 pF

15 V

-55 °C

Oberflächenmontage

PowerTrench®

+150 °C

Logic Level Gate

30 V

1

1 St.